| Datenblatt-Suchmaschine für elektronische Bauteile |
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ISCN244P Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCN244P Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc Website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor ISCN244P DESCRIPTION · Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max)@ IC=3A · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) · Good Linearity of hFE · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Ähnliche Teilenummer - ISCN244P |
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Ähnliche Beschreibung - ISCN244P |
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