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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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ISCNH249P Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNH249P Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCNH249P DESCRIPTION · Drain Current ID= 4A@ TC=25℃ · Drain Source Voltage- : VDSS= 650V(Min) · Static Drain-Source On-Resistance : RDS(on) = 2.4Ω(Max) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGS Gate-Source Voltage ± 30 V ID Drain Current-continuous@ TC=25℃ 4 A ID(puls) Pulse Drain Current 16 A Ptot Total Dissipation@TC=25℃ 106 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3 ℃ /W |
Ähnliche Teilenummer - ISCNH249P |
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Ähnliche Beschreibung - ISCNH249P |
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