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ISCNH250D Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer ISCNH250D
Bauteilbeschribung  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCNH250D Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
ISCNH250D
DESCRIPTION
·
Drain Current ID= 8A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 600V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 0.6Ω(Max)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Switch Mode Power Supply (SMPS)
·
Uninterruptible Power Supply (UPS)
·
Power Factor Correction (PFC)
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±
30
V
ID
Drain Current-continuous@ TC=25℃
8
A
ID(puls)
Pulse Drain Current
24
A
Ptot
Total Dissipation@TC=25℃
63
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.0
℃
/W


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