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NJW0281GD Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer NJW0281GD
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

NJW0281GD Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
NJW0281GD
DESCRIPTION
·
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 350V(Min)
·
Good Linearity of hFE
·
Complement to Type NJW0302GD
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for high fidelity audio amplifier and
other linear applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
5
V
ICM
Collector Current-Continuous
23
A
IB
Base Current-Continuous
1.5
A
PC
Collector Power Dissipation
@ TC=25℃
120
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃


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