| Datenblatt-Suchmaschine für elektronische Bauteile |
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5000 Datenblatt(PDF) 4 Page - Renesas Technology Corp |
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5000 Datenblatt(HTML) 4 Page - Renesas Technology Corp |
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4 / 30 page ![]() F2270 Datasheet © 2019 Integrated Device Technology, Inc. 4 January 16, 2019 Absolute Maximum Ratings Stresses above those listed below may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 2. Absolute Maximum Ratings Parameter Symbol Minimum Maximum Units VDD to GND VDD -0.3 6.0 V VMODE to GND VMODE -0.3 Lower of (VDD, 3.9) V VCTRL to GND VCTRL -0.3 Lower of (VDD + 3.0, 5.3) V RF1, RF2 to GND VRF -0.3 0.3 V RF1 or RF2 Input Power Applied for 24 Hours Maximum (VDD applied at 1GHz and TEP [Exposed Paddle] = +85°C, ZS = ZL = 75Ω) PMAX24 +28 dBm Junction Temperature TJMAX +150 °C Storage Temperature Range TSTOR -65 +150 °C Lead Temperature (soldering, 10s) TLEAD +260 °C Electrostatic Discharge – HBM (JEDEC/ESDA JS-001-2012) VESDHMB 2000 (Class 2) V Electrostatic Discharge – CDM (JEDEC 22-C101F) VESDHCDM 500 (Class C2) V |
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