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RRL035P03 Datenblatt(PDF) 5 Page - VBsemi Electronics Co.,Ltd

Teilenummer RRL035P03
Bauteilbeschribung  P-Channel 20 V (D-S) MOSFET
PDF  9 Pages
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Hersteller  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RRL035P03 Datenblatt(HTML) 5 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
0
25
50
75
100
125
150
Package Limited
T
C - Case Temperature (°C)
Power Derating, Junction-to-Foot
0
1
2
3
4
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
0
25
50
75
100
125
150
T
A - Ambient Temperature (°C)
E-mail：China@VBsemi TEL:86-755-83251052
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RRL035P03
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