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FTK830F Datenblatt(PDF) 6 Page - First Silicon Co., Ltd

Teilenummer FTK830F
Bauteilbeschribung  5A, 500V, 1.5 廓, N-CHANNEL POWER MOSFET
PDF  8 Pages
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Hersteller  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK830F Datenblatt(HTML) 6 Page - First Silicon Co., Ltd

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TYPICAL PERFORMANCE CUVES
MOSFET
2007. 12. 18
6/8
FTK830P / F
Revision No : 0
0
Case Temperature, TC ( C)
50
100
150
1 2
NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
1.0
0.6
0.2
0
0.4
0.8
Case Temperature, TC ( C)
75
100
150
MAXIMUM CONTIONUOUS DRAIN CURRENT
vs CASE TEMPERATURE
0
125
50
25
1
2
3
4
5
0.01
Rectangular Pulse Duration, t1 (s)
NORMALIZED MAXIMUM TRANSIENT
THERMAL IMPEDANCE
1
10 -5
10 -4
10-3
10-2
10-1
10
Single pulse
0.2
0.1
0.01
0 1
1.0
PDM
t1
t2
Duty Factor, D = t1/t2
Peak TJ =PDM × ZθJC RθJC + TC
0.05
0.02
100
10
0.1
Drain to Source Voltage, VDS (V)
FORWARD BIAS SAFE OPERATING AREA
100
10
1
1
1ms
1000
TC = 25 C
TJ = Max Rated
Single Pulse
Operation in This Region
is Limited by rDS(on)
100ms
DC
10ms
10μs
0.5
Drain to Source Voltage
, VDS (V)
100
150
250
OUTPUT CHARACTERISTICS
0
200
50
0
1
2
3
4
5
Drain to Source Voltage
, VDS (V)
4
6
10
SATURATION CHARACTERISTICS
0
8
2
0
1
2
3
4
5
100μ
s
6
300
Pulse Duration= 80μs
Duty Cycle = 0.5% Max
VGS=5.0V
VGS=4.5V
VGS=4.0V
VGS=5.5V
VGS=10V
VGS=5.0V
VGS=4.5V
VGS=4.0V
VGS=10V
VGS=5.5V
Pulse Duration= 80μs
Duty Cycle = 0 5% Max



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