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OPA855-Q1 Datenblatt(PDF) 5 Page - Texas Instruments

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Teilenummer OPA855-Q1
Bauteilbeschribung  8-GHz Gain Bandwidth Product, Gain of 7-V/V Stable, Bipolar Input Amplifier
PDF  29 Pages
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Hersteller  TI [Texas Instruments]
Direct Link  http://www.ti.com
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OPA855-Q1 Datenblatt(HTML) 5 Page - Texas Instruments

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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
VS
Total supply voltage (VS+ – VS– )
5.5
V
VIN+, VIN–
Input voltage
(VS–) – 0.5
(VS+) + 0.5
V
VID
Differential input voltage
1
V
VOUT
Output voltage
(VS–) – 0.5
(VS+) + 0.5
V
IIN
Continuous input current
±10
mA
IOUT
Continuous output current(2)
±100
mA
TJ
Junction temperature
150
°C
TA
Operating free-air temperature
–40
125
°C
Tstg
Storage temperature
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2)
Long-term continuous output current for electromigration limits.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002(1)
±1500
V
Charged-device model (CDM), per AEC
Q100-011
±1000
(1)
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VS
Total supply voltage (VS+ – VS– )
3.3
5
5.25
V
TA
Operating free-air temperature
–40
125
°C
6.4 Thermal Information
THERMAL METRIC(1)
OPA855-Q1
UNIT
DSG (WSON)
8 PINS
RθJA
Junction-to-ambient thermal resistance
80.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
100
°C/W
RθJB
Junction-to-board thermal resistance
45
°C/W
ΨJT
Junction-to-top characterization parameter
6.8
°C/W
ΨJB
Junction-to-board characterization parameter
45.2
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
22.7
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
www.ti.com
OPA855-Q1
SBOSA57 – FEBRUARY 2021
Copyright © 2021 Texas Instruments Incorporated
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