SI4356DY datasheet(4/6 Pages) VISHAY

Teilenummer	SI4356DY

Bauteilbeschribung	N-Channel 30-V MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Hersteller	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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4 / 6 page

Si4356DY

Vishay Siliconix

New Product

www.vishay.com

Document Number: 71880

S-03662—Rev. B, 14-Apr-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

- 0.8

- 0.6

- 0.4

- 0.2

- 0.0

0.2

0.4

- 50

- 25

100

125

150

ID = 250 mA

Threshold Voltage

TJ - Temperature (_C)

10-3

10-2

600

10-1

10-4

100

0.001

200

120

0.01

Single Pulse Power

Time (sec)

160

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 67_C/W

3. TJM - TA = PDMZthJA(t)

Notes:

4. Surface Mounted

PDM

0.1

Safe Operating Area

VDS - Drain-to-Source Voltage (V)

100

0.1

100

0.01

TC = 25_C

Single Pulse

0.1

Limited by

rDS(on)

1 ms

10 ms

100 ms

1 s

10 s

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