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MMBT3906T Datenblatt(PDF) 1 Page - SHIKUES Electronics |
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MMBT3906T Datenblatt(HTML) 1 Page - SHIKUES Electronics |
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1 / 2 page ![]() PNP Plastic-Encapsulate Transistors FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available Also Available in Lead Free Version MARKING:2A MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -Continuous -200 mA PC Collector Power Dissipation 150 mW RƟJA Thermal Resistance, Junction to Ambient 833 ℃/W TJ Operating Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA hFE(1) VCE=-1V,IC=-0.1mA 60 hFE(2) VCE=-1V,IC=-1mA 80 hFE(3) VCE=-1V,IC=-10mA 100 300 hFE(4) VCE=-1V,IC=-50mA 60 DC current gain hFE(5) VCE=-1V,IC=-100mA 30 VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V Collector-emitter saturation voltage VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V VBE(sat)1 IC=-10mA,IB=-1mA -0.65 -0.85 V Base-emitter saturation voltage VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V Transition frequency fT VCE=-20V,IC=-10mA,f=100MHz 250 MHz Collector output capacitance Cobo VCB=-5V,IE=0,f=1MHz 4.5 pF Input capacitance Ciob VEB=-0.5V,IE=0,f=1MHz 10 pF Noise figure NF VCE=-5V,Ic=0.1mA, f Ω 4 dB Delay time td 35 n s Rise time tr VCC=-3V, VBE(OFF)=-0.5V IC=-10mA , IB1=-1mA 35 n s Storage time tS 225 n s Fall time tf VCC=-3V, IC=-10mA IB1= IB2=-1mA 75 n s SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Collector cut-off current ICEX VCB=-30V, VBE(off)=-3V -0. 05 μA MMBT3906T 1 of 2 REV.08 |
Ähnliche Teilenummer - MMBT3906T |
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Ähnliche Beschreibung - MMBT3906T |
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