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AMMC-6140-W50 Datenblatt(PDF) 2 Page - Broadcom Corporation. |
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AMMC-6140-W50 Datenblatt(HTML) 2 Page - Broadcom Corporation. |
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2 / 6 page ![]() 2 AMMC-6140 DC Specifications/Physical Properties[1] Symbol Parameters and Test Conditions Units Min. Typ. Max. I d Drain Supply Current (under any RF power drive and temperature) (V d= 4.5V) mA 27 40 V g Gate Supply Operating Voltage V -1.5 -1.2 -1.0 θ ch-b Thermal Resistance[2] (Backside Temp. T b = 25°C) °C/W 25 Notes: 1. Ambient operational temperature T A= 25°C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (θ ch-b) = 26°C/W at Tchannel (Tc) = 34°C as measured using infrared microscopy. Thermal Resistance at backside temperature (T b) = 25°C calculated from measured data. RF Specifications[3,4,5] (T A = 25°C, Vd = 4.5 V, Id(Q)= 27 mA, Z0 = 50Ω) Symbol Parameters and Test Conditions Units Minimum Typical Sigma Fin Input Frequency GHz 10 to 20 Fout Output Frequency GHz 20 to 40 Po Output Power[6] dBm -2 -1 0.4 Fo Fundamental Isolation (referenced to Po): 20–36 GHz dBc 20 30 5.0 36–40 GHz dBc 14 16 1.0 3Fo 3rd Harmonic Isolation (referenced to Po) dBc 25 1.2 P -1dB Output Power at 1dB Gain Compression dBm +5 RLin Input Return Loss[6] dB -15 RLout Output Return Loss[6] dB -10 SSB Single Sideband Phase Noise (100 KHz offset) dBc/Hz -135 Notes: 3. Small/large signal data measured in wafer form T A = 25°C. 4. 100% on-wafer RF test is done at Pin = +4 dBm and output frequency = 20, 28, 36 and 40 GHz. 5. Specifications are derived from measurements in a 50Ω test environment. Aspects of the multiplier performance may be improved over a nar- rower bandwidth by application of additional matching. 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 hh 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 h Typical distribution of Pout, 2nd Harmonic and 3rd Harmonic Suppression (Fin=14 GHz). Based on 2500 parts sampled over several production lots. 2Fo Pout (dBm) @ 28G Hz Fo Suppression (dBm) @ 14 GHz 3Fo Suppression (dBm) @ 42 GHz -2 -1 hh |
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