2SA812 datasheet(2/5 Pages) JINGHENG

Teilenummer	2SA812

Bauteilbeschribung	PNP Plastic-Encapsulate Transistors

PDF	5 Pages

Scroll/Zoom	100%

Hersteller	JINGHENG [Jinan Jing Heng Electronics Co., Ltd.]

Direct Link	http://www.jinghenggroup.com/

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2 / 5 page

Symbol

Unit

Conditions

Min

Max

Collector-Emitter Breakdown Voltage

V(BR)CEO

Collector-Base Breakdown Voltage

V(BR)CBO

Emitter-Base Breakdown Voltage

V(BR)EBO

Collector cut-off Current

ICBO

Emitter cut-off Current

IEBO

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

JINAN JINGHENG ELECTRONICS CO., LTD.

5-2

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ELECTRICAL CHARACTERISTICS(TA=25°C Unless otherwise specified)

DC Current Gain

Output Capacitance

Current Gain-Bandwidth Product

VCE(set）

VBE

Cob

MHZ

IC=-1mA,IB=0

---

IC=-100μA,IE=0

---

IE=-100μA,IC=0

-5.0

---

VCB=-60V,IE=0

---

-100

VEB=-5V,Ic=0

---

-100

IC=-10mA,VCE=-6V

600

IC=-50mA,IB=-10mA

---

-0.3

IC=-1mA,IB=-6mA

-0.58

-0.68

VCB=-10V,f=1.0MHZ,IE=0

4.5(Typ)

f=30MHZ

180(Typ)

---

IC=-1mA,VCE=-6V

-50

-60

2SA812

hFE

---

AVAILABALE PACK INFORMATION

Product code

Quantity

(Pcs/reel)

Reel Size

(mm)

Quantity

(pcs/carton)

2SA812

Φ180

30K

T/R

Pack

Quantity

(pcs/box)

120K

CLASSIFICATION OF h FE

Rank

Range

90-180

300-600

200-400

Marking

Parameter

135-270

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