2N6560 datasheet(1/2 Pages) ISC

Teilenummer	2N6560

Bauteilbeschribung	isc Silicon NPN Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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isc Silicon NPN Power Transistor

2N6560

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: VCEO=450V(Min)

·

Minimum Lot-to-Lot variations for robust device

Performance and reliable operation

APPLICATIONS

·

Power amplifier and switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNI

T

VCBO

Collector-Base Voltage

450

V

VCEO

Collector-Emitter Voltage

450

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

10

A

PD

Collector Power Dissipation

@ TC=25℃

220

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-65~200

℃

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