RFD10P03LSM datasheet(5/12 Pages) HARRIS

Teilenummer	RFD10P03LSM

Bauteilbeschribung	10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET

PDF	12 Pages

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Hersteller	HARRIS [Harris Corporation]

Direct Link	http://www.harris.com

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FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

FIGURE 13. SWITCHING TIME vs GATE RESISTANCE

NOTE: Refer to Application Notes AN7254 and AN7260.

FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

FIGURE 15. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

-80

-40

120

160

0.4

0.8

1.0

1.2

TJ, JUNCTION TEMPERATURE (

oC)

200

VGS = VDS,ID = -250µA

0.6

125

100

150

RGS, GATE TO SOURCE RESISTANCE (Ω)

td(OFF)

td(ON)

VDD = -15V, ID = -10A, RL= 1.50Ω

-30

-22.5

-15

-7.5

-5.00

-3.75

-2.50

-1.25

0.00

IG(REF)

IG(ACT)

IG(REF)

IG(ACT)

t, TIME (

µs)

VDD = BVDSS

RL = 3.0Ω

IG(REF) = -0.25mA

0.75 BVDSS

0.50 BVDSS

0.25 BVDSS

0.75 BVDSS

0.50 BVDSS

0.25 BVDSS

VGS = -5V

VDD =BVDSS

800

600

400

200

-5

-10

-15

-20

-25

VDS, DRAIN TO SOURCE VOLTAGE (V)

1200

CISS

COSS

CRSS

1000

VGS = 0V, f = 1MHz

RFD10P03L, RFD10P03LSM, RFP10P03L

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