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IRF730 Datenblatt(PDF) 2 Page - First Silicon Co., Ltd

Teilenummer IRF730
Bauteilbeschribung  6.0A, 400V, 1.0廓 N-CHANNEL POWER MOSFET
PDF  6 Pages
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Hersteller  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

IRF730 Datenblatt(HTML) 2 Page - First Silicon Co., Ltd

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MOSFET
ABSOLUTE MAXIMUM RATINGS
(Ta = 25˚C, unless otherwise specified)
PARAMET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
(TJ = 25˚C ~ 125˚C)
400
V
VDS
Drain to Gate Voltage (RGS = 20kΩ) (TJ =25˚C ~ 125˚C)
VDGR
400
V
Gate to Source Voltage
IGS
±20
V
Continuous
5.5
A
Drain Current
TC = 100°C
ID
3.5
IDM
22
A
EAS
74
W
Maximum Power Dissipation
Derating above 25℃
0.6
W/˚C
Single Pulse Avalanche Energy Rating
(VDD=50V, starting TJ =25˚C, L=16mH, RG=25Ω, peak IAS = 5.5A)
290
PD
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
UNIT
62
Thermal Resistance Junction-Ambient
θJA
1.7
Thermal Resistance Junction-Case
θJc
˚C / W
ELECTRICAL CHARACTERISTICS
(TC
= 25˚C , unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
UNIT
400
V
Drain-Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
4.0
µ
A
Gate to Threshold Voltage
VGS(THR)
VDS > ID(ON) X RDS(ON)MAX,
A
On-State Drain Current (Note 1)
ID(ON)
VGS = 10V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
Gate to Source Leakage Current
IGSS
VDS = ±20V
2.9
25
V
Drain to Source On Resistance
(Note 1)
RDS(ON)
ID = 3.3A, VGS = 10V
250
Ω
Forward Transconductance
(Note 1)
4.4
pF
Turn-On Delay Time
tDLY(ON)
10
pF
Rise Time
tR
VDD = 200V, ID ≈ 3.5A,
RGS = 12Ω, RL = 57Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
15
2014. 12. 18
2/6
IRF730/F
Revision No : 0
TSTG
-55~ +150
˚C
MAX
Storage Temperature
Turn-Off Delay Time
tDLY(OFF)
VGS = 10V, ID = 3.5A,
VDS = 0.8 X Rated BVDSS
IG(REF) = 1.5mA
Gate Charge is Essentially Independent of
Operating Temperature
ns
Fall Time
tF
14
Gate to Source Charge
QGS
5.7
nC
Gate to Drain “Miller” Charge
QGD
VDS = 25V, VGS = 0V,f = 1MHz
22
nC
Total Gate Charge
(Gate to Source + Gate to Drain)
Input Capacitance
CISS
700
nC
QG(TOT)
RATINGS
gFS
VDS ≥ 10V, ID = 3.3A
0.85
S
38
TJ
-55~ +150
˚C
Juction Temperature
Pulsed
ID
mJ
A
Output Capacitance
Reverse - Transfer Capacitance
COSS
CRSS
VDS = 0.8 x Rated BVDSS,
VGS = 0V, TJ = 125˚C
2.0
5.5
64
170
±100
1.0
38
µ
A
nA
ns
ns
pF
ns



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