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LM0804 Datenblatt(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Teilenummer LM0804
Bauteilbeschribung  N-Channel Super Trench Power MOSFET
PDF  6 Pages
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Hersteller  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM0804 Datenblatt(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Electrical Characteristics (TJ=25℃ unless otherwise noted)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
V
GS=0V ID=250μA
80
V
I
DSS
Zero Gate Voltage Drain Current
V
DS=80V,VGS=0V
1
μA
I
GSS
Gate-Body Leakage Current
V
GS=20V,VDS=0V
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID=250μA
2.0
3.0
4.0
V
R
DS(ON)
Drain-Source On-State
Resistance
V
GS=10V, ID=20A
3.7
4.4
mΩ
DYNAMIC PARAMETERS
Clss
Input Capacitance
V
DS=30V,VGS=0V,
F=1.0MHz
5500
pF
Coss
Output Capacitance
970
pF
Crss
Reverse Transfer Capacitance
35
pF
SWITCHING PARAMETERS
td(on)
Turn-on Delay Time
V
DD=40V,ID=1A,
V
GS=10V,
R
G=6Ω
22
nS
tr
Turn-on Rise Time
16
nS
td(off)
Turn-Off Delay Time
40
nS
tf
Turn-Off Fall Time
19
nS
Qg
Total Gate Charge
V
DS=40V,ID=10A,
VGS=10V
95
nC
Qgs
Gate-Source Charge
23
nC
Qgd
Gate-Drain Charge
3
2
nC
VSD
Diode Forward Voltage
VGS=0V,ISD=10A
0.72
1.
2
V
Rg
Gate resistance
VGS=0V, VDS=0V,
F=1MHz
1.
5
Ω
Note：
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=
95A., Starting TJ=25℃
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
LM0804
Rev :
www.leiditech.com
01.06.2018
2/6



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