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DMNH6008SCT Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer DMNH6008SCT
Bauteilbeschribung  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

DMNH6008SCT Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
DMNH6008SCT
FEATURES
·
Drain Current –ID= 130A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 60V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 8.0mΩ(Max)
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·
Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
130
A
IDM
Drain Current-Single Pluse
200
A
PD
Total Dissipation @TC=25℃
210
W
TJ
Max. Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.7
℃
/W


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