2012. 03. 05

2/3

Revision No : 0

MBR3060CT, MBRF3060CT, MBRB3060CT

s

c

it

s

ir

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t

c

a

r

a

h

C

l

a

c

ir

t

c

e

l

E

d

n

a

s

g

n

it

a

R

m

u

m

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a

M

( T

o

C unless otherwise noted )

MAXIMUM RATINGS and ELECTRICAL CHARACTERISTICS(TC=25°C unless otherwise moted)

T

I

N

U

T

C

0

6

0

3

F

R

B

M

L

O

B

M

Y

S

S

N

O

I

T

I

D

N

O

C

T

S

E

T

R

E

T

E

M

A

R

A

P

Maximum repetitive peak reverse voltage

60

V

Working peak reverse voltage

60

V

Maximum DC blocking voltage

60

V

Maximum average forward rectified current at

Tc=105°C total device per diode

30

15

A

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load per diode

200

A

Peak repetitive reverse current per leg at tp=2.0us ，

1KHz

1.0

A

Voltage rate of change（rated VR）

DV/dt

10000

V/us

Operating junction temperature range

―55 to +150

°C

Storage temperature range

―55 to +150

°C

Isolation voltage (ITO-220 only) from terminal to

heatsink t = 1 sec

VAC

1500

V

Maximum instantaneous forward voltage per leg

IF=15A

IF=15A

VF

0.85

0.75

V

Maximum reverse current per leg at working peak

Reverse voltage

0.5

40

mA

ti

n

U

x

a

M

r

e

t

e

m

a

r

a

P

l

o

b

m

y

S

Thermal Resistance，Junction to Case per Leg

4.0

°C/W

Thermal Resistance，Junction to Ambient per legs

62.5

°C/W

Note

1. Screw mounting with 4-40 screw，where washer diameteris≤4.9mm(0.19〃)

2. Pulse test:300us pulse width,1% duty cycle