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MBRF30100CT Datenblatt(PDF) 2 Page - First Silicon Co., Ltd

Teilenummer MBRF30100CT
Bauteilbeschribung  Dual Schottky Barrier Rectifiers Reverse Voltage 100 Volts Forward Current 30.0 Amperes
PDF  3 Pages
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Hersteller  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

MBRF30100CT Datenblatt(HTML) 2 Page - First Silicon Co., Ltd

  MBRF30100CT Datasheet HTML 1Page - First Silicon Co., Ltd MBRF30100CT Datasheet HTML 2Page - First Silicon Co., Ltd MBRF30100CT Datasheet HTML 3Page - First Silicon Co., Ltd  
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2012. 03. 05
2/3
Revision No : 0
MBR30100CT, MBRF30100CT, MBRB30100CT
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( T
C = 25
o
C unless otherwise noted )
MAXIMUM RATINGS and ELECTRICAL CHARACTERISTICS(TC=25°C unless otherwise moted)
PARAMETER
TEST CONDITIONS
SYMBOL
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
Working peak reverse voltage
VRWM
100
Maximum DC blocking voltage
VDC
100
Maximum average forward rectified current at
Tc=105°C total device per diode
IF(AV)
30
15
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
IFSM
250
A
Peak repetitive reverse current per leg at tp=2.0us
1KHz
IRRM
1.0
A
Voltage rate of change rated VR
DV/dt
10000
V/us
Operating junction temperature range
TJ
―65 to+150
°C
Storage temperature range
TSTG
―65 to+150
°C
Isolation voltage (ITO-220AB only) from terminal to heatsink
t = 1 min
VAC
1500
V
Maximum instantaneous forward voltage per leg
IF=15A
IF=15A
TC=25
TC=125
VF
0.85
0.75
V
Maximum reverse current per leg at working peak
Reverse voltage
TJ=25
TJ=100°C
IR
500
7
uA
mA
Thermal Characteristics Ta=25℃ unless otherwise noted
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S
RθJC
Thermal Resistance Junction to Case per Leg
4.0
°C /W
RθJA
Thermal Resistance Junction to Ambient per Leg
62.5
°C /W
Note
1. Screw mounting with 4-40 screw where washer diameteris≤4.9mm(0.19 )
2. Pulse test:300us pulse width,1% duty cycle
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