5N65L-TN3-R datasheet(3/5 Pages) DOINGTER

Teilenummer	5N65L-TN3-R

Bauteilbeschribung	N-Channel MOSFET uses advanced trench technology

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Hersteller	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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3 —

(Note 4,5)

Qgs

Gate-Source Charge

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4.9

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Qgd

Gate-Drain Charge

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2.3

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Drain-Source Diode Characteristics

VSD

Source-Drain Diode Forward Voltage

IS=5A, VGS=0V

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1.2

Continuous Source Current

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ISM

Pulsed Source Current

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Trr

Reverse Recovery Time

VGS = 0 V, IS = 5 A,

dIF / dt = 100 A/μs(Note 4)

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378

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Qrr

Reverse Recovery Charge

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1.35

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Notes:

Typical Characteristics： (TJ=25℃ unless otherwise noted)

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 40 mH, IAS = 4 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD≤4A, di/dt ≤200A/us, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

VDS=520V, VGS=10V, ID=5A

5N65L-TN3-R

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