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JCS4N65RB-O-R-N-B Datenblatt(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Teilenummer JCS4N65RB-O-R-N-B
Bauteilbeschribung  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Hersteller  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

JCS4N65RB-O-R-N-B Datenblatt(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
2 —
Symbol
Parameter
Max
Units
RƟJC
Thermal Resistance,Junction to Case
5.1
℃
/W
RƟJA
Thermal Resistance, Junction-to-Ambient
45.3
Electrical Characteristics：(TC=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
V(BR)DSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
650
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=650V
---
---
1
μ
A
VGS=0V, VDS=520V,TC = 125℃
---
---
10
μ
A
IGSS
Gate-Source Leakage Current
VGS=±30V, VDS=0A
---
---
±
100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
---
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=2.5A
---
2.3
2.7
Ω
GFS
Forward Transconductance
VDS = 40 V, ID = 2 .5A(Note 4)
---
3.8
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
400
---
pF
Coss
Output Capacitance
---
55
---
Crss
Reverse Transfer Capacitance
---
1.3
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=325V,ID=5A, RG =25Ω
(Note 4,5)
---
7
---
ns
tr
Rise Time
---
22
---
ns
td(off)
Turn-Off Delay Time
---
15
---
ns
tf
Fall Time
---
23
---
ns
Qg
Total Gate Charge
VDS=520V, VGS=10V, ID=5A
---
13
---
nC
Thermal Characteristics：
JCS4N65RB-O-R-N-B



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