| Datenblatt-Suchmaschine für elektronische Bauteile |
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MBR4045CT Datenblatt(PDF) 1 Page - First Silicon Co., Ltd |
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MBR4045CT Datenblatt(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 6 page ![]() Maximum Ratings and Characteristics I F(AV) Rectangular waveform (Per Device) I FRM @ T C = 118°C V RRM V I FSM @ tp = 5 µs sine V F @ 20 Apk, T J = 125°C T J range Units Description This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse bat- tery protection. 150°C TJ operation Center tap TO-220, TO-263(D2 PAK) packages Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability TO-220 TO-263(D 2 PAK) Characteristics A A (Per Leg) 1 3 2 1 3 2 Dual Schottky Barrier Rectifiers Reverse Voltage 45 Volts , Forward Current 40A SEMICONDUCTOR TECHNICAL DATA MBR4045CT, MBRB4045CT 2019. 10. 14 1/6 Revision No : 0 Values V A °C Symbol 45 40 40 0.58 900 -65~150 Features |
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Ähnliche Beschreibung - MBR4045CT |
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