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UTT18P06G-TN3-R Datenblatt(PDF) 3 Page - VBsemi Electronics Co.,Ltd

Teilenummer UTT18P06G-TN3-R
Bauteilbeschribung  P-Channel 60 V (D-S) MOSFET
PDF  8 Pages
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Hersteller  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UTT18P06G-TN3-R Datenblatt(HTML) 3 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
0
5
10
15
20
25
30
0
246
8
10
VDS -)
V
(
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
3 V
VGS = 10 thru 5 V
4 V
VGS - Gate-to-Source Voltage (V)
25 °C
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
TC = - 55 °C
125 °C
0
300
600
900
1200
1500
1800
0
102030
405060
VDS - Drain-to-Source Voltage (V)
Ciss
Coss
Crss
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS - Gate-to-Source Voltage (V)
25 °C
- 55 °C
TC = 125 °C
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0
5
10
15
20
25
30
ID - Drain Current (A)
VGS = 10 V
VGS = 4.5 V
0
4
8
12
16
20
0
10203040
50
Qg - Total Gate Charge (nC)
VDS = 30 V
ID = 10 A
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UTT18P06G-TN3-R
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