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2SC4533 Datenblatt(PDF) 1 Page - Panasonic Semiconductor |
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2SC4533 Datenblatt(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page ![]() 1 Power Transistors 2SC4533 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg Ratings 500 500 400 7 6 3 1.2 30 2 150 –55 to +150 Unit V V V V A A A W ˚C ˚C TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 2V, IC = 1.2A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCE = 10V, IC = 0.2A, f = 1MHz IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A, VCC = 200V min 400 10 8 typ 10 max 100 100 40 1.0 1.5 1.0 3.0 0.3 Unit µA µA V V V MHz µs µs µs |
Ähnliche Teilenummer - 2SC4533 |
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Ähnliche Beschreibung - 2SC4533 |
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