LM8012P datasheet(2/6 Pages) LEIDITECH

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5. ELECTRICAL CHARACTERISTICS

Min

2. Pulse Test: pulse width ≤ 300 µs, duty cycle ≤ 2%

3. Switching characteristics are independent of operating junction temperatures

NMOSFET

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 µA

VGS = -4.5 V, VDD = -15 V;

ID = -4A, RG = 1Ω

mV/°C

µA

mΩ

-1

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±5 V

±5

Gate Threshold Voltage (Note2)

VGS(TH)

VGS = V DS , ID = 250 µA

Parameter

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS

/TJ

Zero Gate Voltage Drain Curren

Symbol

Test Condition

Typ

Max

Unit

-1

IDSS

VGS = 0 V,

VDS = -20 V

TJ = 25°C

Negative Threshold Temperature

Coefficient (Note2)

VGS(TH)

/TJ

3.0

mV/°C

Drain−to−Source On Resistance (Note2)

RDS(on)

Forward Transconductance (Note2)

gFS

VDS = -5 V, ID = -3A

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz,

VDS = -15 V

2240

Output Capacitance

COSS

240

Reverse Transfer Capacitance

CRSS

210

Total Gate Charge

QG(TOT)

VGS = -4.5 V, VDS = -15 V;

ID = -4A

Threshold Gate Charge

QG(TH)

1.0

Gate−to−Source Charge

QGS

2.9

Gate−to−Drain Charge

QGD

8.8

Rise Time (Note3)

Turn−Off Delay Time (Note3)

td(OFF)

150

Fall Time (Note3)

0.5

Forward Diode Voltage

VSD

VGS = 0 V,

IS = -1A

TJ = 25°C

TJ = 125°C

0.63

Turn−On Delay Time (Note3)

td(ON)

8.6

VGS = -4.5 V, ID = -5A

-0.4

18.5

VGS = -2.5 V, ID = -4 A

-18

VGS = -1.8 V, ID = -3 A

LM8012P

Rev :

www.leiditech.com

01.06.2019

2/6

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