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2SD1664 Datenblatt(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Teilenummer 2SD1664
Bauteilbeschribung  Low saturation voltage:VCE(sat)=0.15V
PDF  4 Pages
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Hersteller  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

2SD1664 Datenblatt(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=50μA,IE=0
40
V
Collector-emitter breakdown voltage V(BR)CEO
IC=1mA,IB=0
32
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=20V,IE=0
0.5
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.5
μA
DC current gain
hFE
VCE=3V,IC=100mA
82
390
Collector-emitter saturation voltage
VCE(sat)
IC=500mA, IB= 50mA
0.15
0.4
V
Transition frequency
fT
VCE=5V, IC= -50mA,
f=100MHz
150
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
15
pF
CLASSIFICATION OF hFE(1)
Rank
P
Q
R
Range
82-180
120-270
180-390
MARKING
DAP
DAQ
DAR
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
2SD1664
Rev : 01.06.2014
2/4
www.leiditech.com



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