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STU6NF10 Datenblatt(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Teilenummer STU6NF10
Bauteilbeschribung  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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Hersteller  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

STU6NF10 Datenblatt(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Description：
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) VDS=100V,ID=
A,RDS(ON)<
mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current-TC=25℃
A
Continuous Drain Current-TC=70℃
IDM
Pulsed Drain Current
45.4
PD
Power Dissipation,
TC=25℃
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +175
℃
Thermal Characteristics：
Symbol
Parameter
Max
Units
RƟJC
Thermal Resistance,Junction to Case
℃/W
Derating factor
11.3
9
11.3
120
,
TC=70℃
W
29.9
19.1
4.17
D
G
D
S
STU6NF10


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