US6M1 datasheet(3/8 Pages) ROHM

3 / 8 page

US6M1

Transistors

3/7

Electrical characteristics (Ta=25

°C)

<Tr2. P-ch MOSFET>

Parameter

Symbol

IGSS

Yfs

Min.

−

Typ.

Max.

Unit

Conditions

V(BR) DSS

IDSS

VGS (th)

RDS (on)

Ciss

Coss

Crss

td (on)

td (off)

Qgs

Qgd

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

∗Pulsed

−

µAVGS=12V, VDS=0V

VDD

−15V

−20

−−

VID

= −1mA, VGS=0V

−−

−1

µAVDS= −20V, VGS=0V

−0.7

−−2.0

VDS

= −10V, ID= −1mA

−

280

390

= −1A, VGS= −4.5V

−

310

430

Ω ID= −1A, VGS= −4V

−

570

800

= −0.5A, VGS= −2.5V

0.7

−−

SID

= −0.5A, VDS= −10V

−

150

−

VDS

= −10V

−

VGS

=0V

−

=1MHz

VGS

= −4.5V

=30Ω

RGS

=10Ω

−

2.1

−

0.5

−

0.5

−

VGS

= −4.5V

−−

= −1A

= −0.5A, VDD −15V

=15Ω

RGS

=10Ω

Body diode characteristics (Source-Drain) (Ta=25

°C)

<Tr2. P-ch MOSFET>

VSD

−−

−1.2

= −0.4A, VGS=0V

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

∗

Forward voltage

∗Pulsed

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