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SSM4800AGM Datenblatt(PDF) 5 Page - VBsemi Electronics Co.,Ltd

Teilenummer SSM4800AGM
Bauteilbeschribung  N-Channel 20V (D-S) MOSFET
PDF  9 Pages
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Hersteller  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SSM4800AGM Datenblatt(HTML) 5 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
3
6
9
12
15
18
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
0
1
2
3
4
5
6
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Ambient
0.0
0.5
1.0
1.5
2.0
0
25
50
75
100
125
150
TA -Ambient Temperature (°C)
www.VBsemi.tw
E-mail：China@VBsemi TEL:86-755-83251052
5
SSM4800AGM



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