UT90N03L-TN3-R datasheet(4/4 Pages) DOINGTER

Datenblatt-Suchmaschine für elektronische Bauteile

UT90N03L-TN3-R Datenblatt(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Teilenummer	UT90N03L-TN3-R

Bauteilbeschribung	N-Channel MOSFET uses advanced trench technology

PDF	4 Pages

Scroll/Zoom	100%

Hersteller	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.doingter.cn/

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Tj - Junction Temperature (°C)

Fig9.

Threshold Voltage Vs. Temperature

Fig11. Unclamped Inductive Test Circuit and

VDS , Drain-Source Voltage (V)

Fig10. Typical Capacitance Vs.Drain-Source Voltage

Fig12. Switching Time Test Circuit and waveforms

UT90N03L-TN3-R

VSD, Source-Drain Voltage (V)

Fig7. Typical Source-Drain Diode Forward Voltage

Qg -Total Gate Charge (nC)

Fig8. Typical Gate Charge Vs.Gate-Source Voltage

waveforms

００８６－０７５５－８２７８－９０５６

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