UTD36N03L-TN3-R datasheet(4/5 Pages) DOINGTER

Datenblatt-Suchmaschine für elektronische Bauteile

UTD36N03L-TN3-R Datenblatt(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Teilenummer	UTD36N03L-TN3-R

Bauteilbeschribung	N-Channel MOSFET uses advanced trench technology

PDF	5 Pages

Scroll/Zoom	100%

Hersteller	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.doingter.cn/

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Figure 5. VGS(th) vs Junction Temperature

Figure 6. RDS(ON) vs Junction Temperature

TJ-Junction Temperature(℃)

Figure 7. Gate Charge Waveforms

Figure 8. Capacitance

Qg(nC)

VDS Drain-to-Source Voltage(V)

Figure 9. Body-Diode Characteristics

Figure 10. Maximum Safe Operating Area

Vsd

(V)

VDS Drain-to-Source Voltage(V)

UTD36N03L-TN3-R

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