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MMG35HD120XT6TC Datenblatt(PDF) 2 Page - MacMic |
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MMG35HD120XT6TC Datenblatt(HTML) 2 Page - MacMic |
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2 / 7 page ![]() Unit nA Ω µC nF pF ns ns ns ns ns ns ns TJ=125℃ TJ=150℃ IC=35A, VGE=15V, TJ=125℃ TJ=25℃ 0.21 2.8 TJ=25℃ 240 35 40 40 40 35 IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) V 10 6.5 2.15 VCE=1200V, VGE=0V, TJ=150℃ mA Gate Leakage Current Rgint Symbol VCE(sat) Typ. 2.25 VCE=VGE, IC=1.2mA Min. VGE(th) Integrated Gate Resistor -400 1.85 VCE=0V,VGE=±20V, TJ=25℃ 0 Gate Charge Cies Qg TJ=150℃ Input Capacitance 5.0 5.8 Parameter/Test Conditions 1 110 TJ=125℃ IC=35A, VGE=15V, TJ=25℃ 2.25 400 Gate Emitter Threshold Voltage 40 VCE=1200V, VGE=0V, TJ=25℃ tr td(on) IC=35A, VGE=15V, TJ=150℃ Collector Emitter Saturation Voltage Turn on Delay Time IGES MMG35HD120XT6TC TJ=25℃ ICES Collector Leakage Current VCE=600V, IC=35A , VGE=15V VCE=25V, VGE=0V, f =1MHz Cres Reverse Transfer Capacitance VCC=600V,IC=35A RG =20Ω, VGE=±15V, Inductive Load Rise Time Max. 2 ns ns ns ns ns mJ mJ mJ mJ K /W Unit ns A µC mJ TJ=125℃ 2.25 Max. J IF=35A , VGE=0V, TJ =125℃ 1.6 Reverse Recovery Time IF=35A , VGE=0V, TJ =25℃ Symbol TJ=125℃ IF=35A , VGE=0V, TJ =150℃ 280 190 1.8 ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Diode-inverter Typ. V 1.55 210 trr Erec 4.5 IRRM Max. Reverse Recovery Current Reverse Recovery Energy TJ=150℃ 2 Min. 4.7 3.5 40 VCC=600V,IC=35A RG =20Ω, VGE=±15V, Inductive Load TJ=25℃ Forward Voltage 6.1 390 VF TJ=125℃ Reverse Recovery Charge QRR 230 Parameter/Test Conditions Turn off Delay Time 145 TJ=150℃ 300 TJ=150℃ TJ=150℃ tf Fall Time Eon Turn on Energy VCC=600V,IC=35A RG =20Ω, VGE=±15V, Inductive Load td(off) Eoff Turn off Energy TJ=125℃ 3.3 A RthJC Junction to Case Thermal Resistance (Per IGBT) 0.72 ISC IF=35A , VR=600V dIF/dt=-850A/μs TJ =150℃ Short Circuit Current tpsc≤10µS , VGE=15V TJ=150℃,VCC=600V 2 mJ K /W Erec Reverse Recovery Energy 1.05 RthJCD 2 Junction to Case Thermal Resistance ( Per Diode) 2 |
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