Data Sheet

ADRF5519

Dual-Channel, 2.3 GHz to 2.8 GHz, 20 W Receiver Front End

Rev. 0

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FEATURES

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Integrated dual-channel RF front end

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2-stage LNA and high power silicon SPDT switch

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On-chip bias and matching

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Single-supply operation

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LTE average power (9 dB PAR) full lifetime: 43 dBm

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Gain

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High gain mode: 35 dB typical at 2.6 GHz

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Low gain mode: 14 dB typical at 2.6 GHz

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Low noise figure

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High gain mode: 1.0 dB typical at 2.6 GHz

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Low gain mode: 1.0 dB typical at 2.6 GHz

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High isolation

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RXOUT-CHA and RXOUT-CHB: 45 dB typical

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TERM-CHA and TERM-CHB: 60 dB typical

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Low insertion loss: 0.5 dB typical at 2.6 GHz

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High OIP3: 32 dBm typical

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Power-down mode and low gain mode

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Low supply current

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High gain mode: 110 mA typical at 5 V

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Low gain mode: 36 mA typical at 5 V

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Power-down mode: 12 mA typical at 5 V

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Positive logic control

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6 mm × 6 mm, 40-lead LFCSP package

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Pin compatible with the ADRF5545A and ADRF5549

10 W versions

APPLICATIONS

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Wireless infrastructure

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TDD massive multiple input and multiple output and active

antenna systems

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TDD-based communication systems

FUNCTIONAL BLOCK DIAGRAM

Figure 1.

GENERAL DESCRIPTION

The ADRF5519 is a dual-channel, integrated RF, front-end

multichip module designed for time division duplexing (TDD)

applications that operates from 2.3 GHz to 2.8 GHz. The

ADRF5519 is configured in dual channels with a cascading two-

stage low noise amplifier (LNA) and a high power silicon single-

pole, double-throw (SPDT) switch.

In high gain mode, the cascaded two-stage LNA and switch offer a

low noise figure (NF) of 1.0 dB and a high gain of 35 dB at 2.6 GHz

with an output third-order intercept point (OIP3) of 32 dBm (typical).

In low gain mode, one stage of the two-stage LNA is in bypass,

providing 14 dB of gain at a lower current of 36 mA. In power-down

mode, the LNAs are turned off and the device draws 12 mA.

In transmit operation, RF inputs are connected to a termination pin

(ANT-CHA or ANT-CHB connected to TERM-CHA or TERM-CHB,

respectively). The switch provides a low insertion loss of 0.5 dB and

handles a long-term evolution (LTE) average power (9 dB peak to

average ratio (PAR)) of 43 dBm for full lifetime operation.

The device comes in a RoHS-compliant, compact, 6 mm × 6 mm,

40-lead LFCSP package.