Data Sheet

ADRF5549

Rev. A | Page 3 of 15

SPECIFICATIONS

ELECTRICAL SPECIFICATIONS

VDD1-ChA, VDD1-ChB, VDD2-ChA, VDD2-ChB, and SWVDD-ChAB = 5 V, SWCTRL-ChAB = 0 V or SWVDD-ChAB, BP-ChA =

Table 1.

Parameter

Test Conditions/Comments

Min

Typ

Max

Unit

FREQUENCY RANGE

1.8

2.8

GHz

GAIN1

Receive operation at 2.3 GHz

High Gain Mode

35

dB

Low Gain Mode

17

dB

GAIN FLATNESS1

Receive operation in any 100 MHz bandwidth

High Gain Mode

0.6

dB

Low Gain Mode

0.2

dB

NOISE FIGURE1

Receive operation at 2.3 GHz

High Gain Mode

1.4

dB

Low Gain Mode

1.4

dB

OUTPUT THIRD-ORDER INTERCEPT POINT (OIP3)1

Receive operation, two-tone output power =

8 dBm per tone at 1 MHz tone spacing

High Gain Mode

32

dBm

Low Gain Mode

25

dBm

OUTPUT 1 dB COMPRESSION (OP1dB)

High Gain Mode

19

dBm

Low Gain Mode

13

dBm

INSERTION LOSS1

Transmit operation at 2.3 GHz

0.6

dB

Channel to Channel Isolation1

At 2.3 GHz

Between RxOUT-ChA and RxOUT-ChB

Receive operation

50

dB

Between TERM-ChA and TERM-ChB

Transmit operation

62

dB

SWITCH ISOLATION

ANT-ChA to TERM-ChA and ANT-ChB to TERM-ChB1

Transmit operation, PD-ChAB = 0 V

25

dB

50% control voltage to 90%, 10% of RxOUT-ChA

or RxOUT-ChB in receive operation

860

ns

50% control voltage to 90%, 10% of TERM-ChA or

TERM-ChB in transmit operation

800

ns

RF INPUT POWER AT ANT-ChA, ANT-ChB1

Receive operation, LTE average (9 dB PAR)

15

dBm

RECOMMENDED OPERATING CONDITIONS

Bias Voltage Range

VDD1-ChA, VDD1-ChB, VDD2-ChA, VDD2-ChB,

and SWVDD-ChAB

4.75

5

5.25

V

Control Voltage Range2

SWCTRL-ChAB, BP-ChA, BP-ChB, PD-ChAB

0

VDD

V

RF Input Power at ANT-ChA, ANT-ChB

SWCTRL-ChAB = 5 V, PD-ChAB = 5 V, BP-ChA =

Continuous wave

40

dBm

9 dB PAR LTE full lifetime average

40

dBm

9 dB PAR LTE single event (<10 sec) average

43

dBm

TCASE3

−40

+105

°C

Junction Temperature at Maximum TCASE3

Receive operation1

132

°C

Transmit operation1

134

°C