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STTH2R02AY Datenblatt(PDF) 3 Page - STMicroelectronics |
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STTH2R02AY Datenblatt(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 PF(AV)(W) IF (AV) (A) = 0.05 = 0.2 = 0.1 = 0. = 1 T =tp/T tp Figure 2. Forward voltage drop versus forward current (typical values) 0.01 0.10 1.00 10.00 100.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 T j = 25 °C T j = 150 °C I F(A) V F(V) Figure 3. Forward voltage drop versus forward current (maximum values) 0.01 0.10 1.00 10.00 100.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 T j = 25 °C T j = 150 °C I F(A) V F(V) Figure 4. Relative variation of thermal impedance junction to lead versus pulse duration 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Z th(j-l) / Rth(j-l) t p(s) Single pulse Figure 5. Reverse recovery charges versus dIF/dt (typical values) 0 10 20 30 40 50 60 70 10 1000 QRR(nC) dIF/dt(A/µs) V R = 160 V T j = 125 °C I F = IF(AV) Figure 6. Reverse recovery time versus dIF/dt (typical values) 0 10 20 30 40 50 60 10 1000 trr (nC) dIF/dt(A/µs) V R = 160 V T j = 125 °C I F = IF(AV) T j =125 °C STTH2R02AY Characteristics (curves) DS13660 - Rev 1 page 3/9 |
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