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2SC6014 Datenblatt(PDF) 2 Page - Sanyo Semicon Device

Teilenummer 2SC6014
Bauteilbeschribung  NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications
PDF  4 Pages
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Hersteller  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6014 Datenblatt(HTML) 2 Page - Sanyo Semicon Device

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2SC6014
No.8557-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gain-Bandwidth Product
fT
VCE=10V, IC=500mA
420
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
20
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=1.5A, IB=30mA
95
140
mV
IC=2.5A, IB=125mA
135
200
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1.5A, IB=30mA
0.83
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0A
40
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
30
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0A
6
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
300
ns
Fall Time
tf
See specified Test Circuit.
15
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7007-004
VR
RB
VCC=12V
IC=20IB1= --20IB2=500mA
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
24
Ω
470
µF
100
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
1.5
0.5
0.4
3.0
4.5
1.6
0.4
12
3
1.5
Top View
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
5.0
4.0
2.0
3.0
1.0
0.5
4.5
2.5
3.5
1.5
0
5
4
2
3
1
0
0.2
0
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT09752
10mA
20mA
30mA
50mA
60mA
IB=0mA
5mA
VCE=2V
0
0.2
0.4
0.6
0.8
1.0
1.1
0.1
0.3
0.5
0.7
0.9
IT09753
40mA



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