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HMC553ALC3BTR-R5 Datenblatt(PDF) 4 Page - Analog Devices

Teilenummer HMC553ALC3BTR-R5
Bauteilbeschribung  6 GHz to 14 GHz, GaAs, MMIC, Double-Balanced Mixer
PDF  25 Pages
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HMC553ALC3BTR-R5 Datenblatt(HTML) 4 Page - Analog Devices

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HMC553ALC3B
Data Sheet
Rev. B | Page 4 of 25
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
RF Input Power
25 dBm
LO Input Power
25 dBm
IF Input Power
25 dBm
IF Source/Sink Current
3 mA
Reflow Temperature
260°C
Maximum Junction Temperature
175°C
Continuous Power Dissipation, PDISS
(TA = 85°C, Derate 4.6 mW/°C Above 85°C)
414 mW
Operating Temperature Range
−40°C to +85°C
Storage Temperature Range
−65°C to +150°C
Lead Temperature Range
−65°C to +150°C
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM)
1000 V
Field Induced Charged Device Model
(FICDM)
1250 V
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to PCB design and
operating environment. Careful attention to PCB thermal
design is required.
θJA is the natural convection junction to ambient thermal
resistance measured in a one cubic foot sealed enclosure. θJC is
the junction to case thermal resistance.
Table 3. Thermal Resistance
Package Type
θJA
θJC
Unit
E-12-41
120
175
°C/W
1 See JEDEC standard JESD51-2 for additional information on optimizing the
thermal impedance (PCB with 3 × 3 vias).
ESD CAUTION



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