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ACE25AA128GFMLTH Datenblatt(PDF) 13 Page - ACE Technology Co., LTD. |
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ACE25AA128GFMLTH Datenblatt(HTML) 13 Page - ACE Technology Co., LTD. |
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13 / 71 page ![]() ACE25AA128G Serial NOR Flash Memory 128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector VER 1.1 13 See Table2, every command sequence starts with a one-byte command code. Depending on the command, this might be followed by address bytes, or by data bytes, or by both or none. CS# must be driven high after the last bit of the command sequence has been shifted in. For the command of Read, Fast Read, Read Status Register, and Read Device ID, the shifted-in command sequence is followed by a data-out sequence. CS# can be driven high after any bit of the data-out sequence is being shifted out. For the command of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write Enable, Write Disable, CS# must be driven high exactly at a byte boundary, otherwise the command is rejected. That is CS# must driven high when the number of clock pulses after CS# being driven low is an exact multiple of eight. For Page Program, if at any time the input byte is not a full byte, nothing will happen and WEL will not be reset. Table2. Commands Command Name Byte1 Byte2 Byte3 Byte4 Byte5 Byte6 n-Bytes Write Enable 06H Write Enable for Volatile Status Register 50H Write Disable 04H Read Status Register 05H (S7-S0) (continuous) Read Status Register-1 35H (S15-S8) (continuous) Write Status Register 01H (S7-S0) (S15-S8) (continuous) Read Data 03H A23-A16 A15-A8 A7-A0 (D7-D0) (Next byte) (continuous) Fast Read 0BH A23-A16 A15-A8 A7-A0 dummy (D7-D0) (continuous) Dual Output Fast Read 3BH A23-A16 A15-A8 A7-A0 dummy (D7-D0)(1) (continuous) Dual I/O Fast Read BBH A23-A8(2) A7-A0 M7-M0(2) (D7-D0)(1) (continuous) Quad Output Fast Read 6BH A23-A16 A15-A8 A7-A0 dummy (D7-D0)(3) (continuous) |
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