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ISCNH299W Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer ISCNH299W
Bauteilbeschribung  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCNH299W Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
ISCNH299W
FEATURES
·
Static drain-source on-resistance:
RDS(on)≤7.0mΩ
·
Enhancement mode:
Vth = 2.0 to 4.0 V (VDS=VGS, ID=250μA)
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRITION
·
High Efficiency Synchronous Rectification in SMPS
·
Uninterruptible Power Supply
·
High Speed Power Switching
·
Hard Switched And High Frequency Circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
150
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
150
A
IDM
Drain Current-Single Pulsed
450
A
PD
Total Dissipation @TC=25℃
370
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Channel-to-case thermal resistance
0.41
℃
/W


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