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AT25DF512C Datenblatt(PDF) 32 Page - Dialog Semiconductor

Teilenummer AT25DF512C
Bauteilbeschribung  512-Kbit, 1.65V Minimum SPI Serial Flash Memory with Dual-Read Support
PDF  43 Pages
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AT25DF512C Datenblatt(HTML) 32 Page - Dialog Semiconductor

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AT25DF512C
DS-25DF512C–030E–2/2017
Notes: 1. Not 100% tested (value guaranteed by design and characterization).
2. Only applicable as a constraint for the Write Status Register command when BPL = 1.
tCSHS
Chip Select High Setup Time (relative to Clock)
6
6
ns
tCSHH
Chip Select High Hold Time (relative to Clock)
6
6
ns
tDS
Data In Setup Time
2
2
ns
tDH
Data In Hold Time
1
1
ns
tDIS(1)
Output Disable Time
8
6
ns
tV
Output Valid Time
8
6
ns
tOH
Output Hold Time
0
0
ns
tHLS
HOLD Low Setup Time (relative to Clock)
6
5
ns
tHLH
HOLD Low Hold Time (relative to Clock)
6
5
ns
tHHS
HOLD High Setup Time (relative to Clock)
6
5
ns
tHHH
HOLD High Hold Time (relative to Clock)
6
5
ns
tHLQZ(1)
HOLD Low to Output High-Z
7
6
ns
tHHQX
(1)
HOLD High to Output Low-Z
7
6
ns
tWPS(1)(2)
Write Protect Setup Time
20
20
ns
tWPH(1)(2)
Write Protect Hold Time
100
100
ns
tEDPD
(1)
Chip Select High to Deep Power-Down
2
2
µs
tEUDPD.
Chip Select High to Ultra Deep Power-Down
3
3
µs
tSWRST
Software Reset Time
60
60
µs
tCSLU
Minimum Chip Select Low to Exit Ultra Deep
Power-Down
20
20
ns
tXUDPD
Exit Ultra Deep Power-Down Time
70
70
µs
tRDPD
(1)
Chip Select High to Standby Mode
8
8
µs
13.6 Program and Erase Characteristics
Symbol
Parameter
1.65V-3.6V(3)
2.3V-3.6V
Min
Typ
Max
Min
Typ
Max
Units
tPP
(1)
Page Program Time
256 Bytes
1.5
3.5
1.5
3.5
ms
tBP
Byte Program Time
12
8
µs
tPE
Page Erase Time
256 Bytes
6
25
6
25
ms
tBLKE(1)
Block Erase Time
4 Kbytes
50
75
50
60
ms
32 Kbytes
350
600
300
400
13.5 AC Characteristics – All Other Parameters
Symbol
Parameter
1.65V to 3.6V
2.3V to 3.6V
Units
Min
Typ
Max
Min
Typ
Max



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