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NGTP25N140FST4G Datenblatt(PDF) 9 Page - ON Semiconductor

Teilenummer NGTP25N140FST4G
Bauteilbeschribung  Reading ON Semiconductor IGBT Datasheets
PDF  10 Pages
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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NGTP25N140FST4G Datenblatt(HTML) 9 Page - ON Semiconductor

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and the falling collector current. Because the IGBT is a
minority carrier device, the collector current continues to
flow after the time where the collector voltage has fully
risen. This residual current, called tail current, eventually
decays to zero. It is customary to add a fixed length of time
to the end of the turn−off time to capture the energy lost
during the entire tail current. This added time is denoted as
x
ms in Figure 10.
Figure 10. Turn−off Switching Illustration Showing
the Definitions of the Turn−off Switching
Characteristics
Total Switching Loss, Ets
The total switching losses comprise the sum of the
turn−on and turn−off switching losses.
Typical switching time and switching energy loss graphs
are given that describe the dependence of the switching
characteristics on a variety of system variables. The
dependence on junction temperature, collector current,
collector−emitter voltage, and gate resistance are all
provided to aid in the design process.
Diode Characteristics
Figure 11. Copackaged IGBT and Freewheeling
Diode
IGBTs are frequently used in applications where the load
is inductive, such as motor control. These applications are
hard switching and require that the IGBT be in parallel with
a freewheeling diode. ON Semiconductor
offers
copackaged IGBT and diode devices. The diode cathode and
IGBT collector are connected together and the diode anode
and IGBT emitter are also connected, as shown in Figure 11.
The freewheeling diode takes the place of the body diode
that otherwise exists in a power MOSFET. For IGBTs that
are copackaged with a freewheeling rectifier diode, the
datasheet will also include electrical specifications for the
diode, as shown in Table 6.
Table 6. ELECTRICAL CHARACTERISTICS OF THE DIODE
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 15 A
VGE = 0 V, IF = 15 A, TJ = 150°C
VF
1.6
1.6
1.85
V
Reverse recovery time
TJ = 25°C
IF = 15 A, VR = 200 V
diF/dt = 200 A/ms
trr
270
ns
Reverse recovery charge
Qrr
350
nc
Reverse recovery current
Irrm
5
A
Reverse recovery time
TJ = 125°C
IF = 15 A, VR = 200 V
diF/dt = 200 A/ms
trr
350
ns
Reverse recovery charge
Qrr
1000
nc
Reverse recovery current
Irrm
7.5
A
Forward Voltage, VF
The forward voltage of the rectifier is measured while the
IGBT gate and emitter terminals are tied together, ensuring
the IGBT is in its off−state. A forcing current enters the
emitter terminal and the emitter−collector (anode−cathode)
voltage is measured.
Forward voltage is an important parameter in hard
switching applications. VF is specified in the electrical table



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