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NGTP25N140FST4G Datenblatt(PDF) 9 Page - ON Semiconductor |
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NGTP25N140FST4G Datenblatt(HTML) 9 Page - ON Semiconductor |
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9 / 10 page ![]() AND9068/D http://onsemi.com 8 and the falling collector current. Because the IGBT is a minority carrier device, the collector current continues to flow after the time where the collector voltage has fully risen. This residual current, called tail current, eventually decays to zero. It is customary to add a fixed length of time to the end of the turn−off time to capture the energy lost during the entire tail current. This added time is denoted as x ms in Figure 10. Figure 10. Turn−off Switching Illustration Showing the Definitions of the Turn−off Switching Characteristics Total Switching Loss, Ets The total switching losses comprise the sum of the turn−on and turn−off switching losses. Typical switching time and switching energy loss graphs are given that describe the dependence of the switching characteristics on a variety of system variables. The dependence on junction temperature, collector current, collector−emitter voltage, and gate resistance are all provided to aid in the design process. Diode Characteristics Figure 11. Copackaged IGBT and Freewheeling Diode IGBTs are frequently used in applications where the load is inductive, such as motor control. These applications are hard switching and require that the IGBT be in parallel with a freewheeling diode. ON Semiconductor offers copackaged IGBT and diode devices. The diode cathode and IGBT collector are connected together and the diode anode and IGBT emitter are also connected, as shown in Figure 11. The freewheeling diode takes the place of the body diode that otherwise exists in a power MOSFET. For IGBTs that are copackaged with a freewheeling rectifier diode, the datasheet will also include electrical specifications for the diode, as shown in Table 6. Table 6. ELECTRICAL CHARACTERISTICS OF THE DIODE Parameter Test Conditions Symbol Min Typ Max Unit DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 15 A VGE = 0 V, IF = 15 A, TJ = 150°C VF 1.6 1.6 1.85 V Reverse recovery time TJ = 25°C IF = 15 A, VR = 200 V diF/dt = 200 A/ms trr 270 ns Reverse recovery charge Qrr 350 nc Reverse recovery current Irrm 5 A Reverse recovery time TJ = 125°C IF = 15 A, VR = 200 V diF/dt = 200 A/ms trr 350 ns Reverse recovery charge Qrr 1000 nc Reverse recovery current Irrm 7.5 A Forward Voltage, VF The forward voltage of the rectifier is measured while the IGBT gate and emitter terminals are tied together, ensuring the IGBT is in its off−state. A forcing current enters the emitter terminal and the emitter−collector (anode−cathode) voltage is measured. Forward voltage is an important parameter in hard switching applications. VF is specified in the electrical table |
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