H30PR5 datasheet(4/15 Pages) INFINEON

4 / 15 page

Datasheet

V2.3

2019-09-20

IHW30N135R5

ResonantSwitchingSeries

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

StaticCharacteristic

Collector-emitter breakdown voltage

V(BR)CES VGE=0V,IC=0.50mA

1350

Collector-emitter saturation voltage

VCEsat

VGE=15.0V,IC=30.0A

Tvj=25°C

Tvj=125°C

Tvj=175°C

1.65

1.95

2.05

1.95

Diode forward voltage

VGE=0V,IF=30.0A

Tvj=25°C

Tvj=125°C

Tvj=175°C

1.85

2.10

2.25

2.05

Gate-emitter threshold voltage

VGE(th)

IC=0.75mA,VCE=VGE

5.1

5.8

6.4

Zero gate voltage collector current

ICES

VCE=1350V,VGE=0V

Tvj=25°C

Tvj=175°C

630

100

µA

Gate-emitter leakage current

IGES

VCE=0V,VGE=20V

100

Transconductance

gfs

VCE=20V,IC=30.0A

23.0

Integrated gate resistor

none

Ω

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

DynamicCharacteristic

Input capacitance

Cies

1810

Output capacitance

Coes

Reverse transfer capacitance

Cres

VCE=25V,VGE=0V,f=1MHz

Gate charge

VCC=1080V,IC=30.0A,

VGE=15V

235.0

Internal emitter inductance

measured 5mm (0.197 in.) from

case

13.0

SwitchingCharacteristic,InductiveLoad

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

IGBTCharacteristic,atTvj=25°C

Turn-off delay time

td(off)

310

Fall time

120

Turn-off energy

Eoff

1.40

Tvj=25°C,

VCC=600V,IC=30.0A,

VGE=0.0/15.0V,

RG(on)=10.0

Ω,RG(off)=10.0Ω,

σ=175nH,Cσ=40pF

σ,CσfromFig.E

Energy losses include “tail” and

diode reverse recovery.

Turn-off energy, soft switching

Eoff

dv/dt=200.0V/µs

0.17

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