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PCIMX6DP6AVT2AB Datenblatt(PDF) 164 Page - NXP Semiconductors |
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PCIMX6DP6AVT2AB Datenblatt(HTML) 164 Page - NXP Semiconductors |
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164 / 166 page ![]() i.MX 6DualPlus/6QuadPlus Automotive Applications Processors, Rev. 3, 11/2018 164 NXP Semiconductors Revision History 7 Revision History Table 99 provides a revision history for this i.MX 6DualPlus/6QuadPlus data sheet. Table 99. i.MX 6DualPlus/6QuadPlus Data Sheet Document Revision History Rev. Number Date Substantive Change(s) 3 10/2018 Rev. 3 changes include the following: • Table 6Table 21, “XTALI and RTC_XTALI DC Parameters,” on page 39, – Row: XTALI input leakage current at startup, IXTALI_STARTUP: Changed from “... driven 32KHz RTC clock @ 1.1V” to “...driven 24 MHz clock at 1.1V.” • Table 51, “eMMC4.4/4.41 Interface Timing Specification,” on page 81, – Row: SD2, uSDHC Output Delay: Changed tOD from 2.5 ns minimum to 2.8 ns and 7.1 ns maximum to 6.8 ns. 2 11/2018 Rev. 2 changes include the following: • Changed throughout: terminology from “floating” to “not connected”. • Figure 1, "Part Number Nomenclature—i.MX 6DualPlus and i.MX 6QuadPlus," on page 4: Corrected Automotive grade frequency from 850 to 852 MHz. • Section 1.2, “Features” on page 4: Changed Internal/external peripheral item from “LVDS serial ports— One port up to 165 MPixels/sec…” to: “…—One port up to 170 MPixels/sec…”. • Table 4, “Absolute Maximum Ratings,” on page 21: Multiple changes: – Core supply voltages: Separated rows by LDO enabled and LDO bypass. – Renamed Internal supply voltages to Core supply output voltage (LDO enabled) and changed maximum value from 1.3 to 1.4V. Added symbol NVCC_PLL_OUT. – Reordered VDD_HIGH_IN row and changed maximum value from 3.6 to 3.7V. – DDR I/O supply voltage: added symbol, NVCC_DRAM, and footnote. – GPIO I/O supply voltage: Added symbols. Changed maximum value from 3.6 to 3.7V. – Added HDMI, PCIe, and SATA PHY (VPH and VP) supply voltage rows and values. – Consolidated LVDS, MLB, and MIPI I/O supply voltage rows. Added symbols. – Added rows: PCIe PHY, RGMII I/O, and SMVS IN supply voltages, symbols, and values. – USB I/O supply voltage: moved symbols from parameters to symbol column. Changed maximum value from 3.63 to 3.73V. Added symbol USB_OTG_CHD_B – USB VBUS supply voltage: Changed maximum value from 5.25 to 5.35V. – Separated Vin/Vout input/output voltage range distinguishing between non-DDR and DDR pins. Changed maximum value for Vin/Vout input/output voltage range DDR pins to OVDD+0.4. Added footnotes to both maximum values. – Separated ESD immunity by HBM and CDM. Expanded symbols for each. • Section 4.1.2, “Thermal Resistance” on page 22: Added NOTE: “Per JEDEC JESD51-2, the intent of thermal resistance measurements…”. • Table 5, “FCPBGA Package Thermal Resistance Data (Lidded),” on page 22: Added Lidded Table. • Section 4.2.1, “Power-Up Sequence” on page 33: – Removed inference to internal POR. • Section 4.5.2, “OSC32K” on page 37: Removed content about calculating the proper current limiting resistor for a coin cell. • Section 4.6.1, “XTALI and RTC_XTALI (Clock Inputs) DC Parameters” on page 39: Added “NOTE: The Vil and Vih specifications only apply when an external clock source is used…”. • Table 21, “XTALI and RTC_XTALI DC Parameters,” on page 39: Added footnote to RTC_XTALI high level DC input voltage row: “This voltage specification must not be exceeded and …”. (Revision History table continued on next page.) |
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