| Datenblatt-Suchmaschine für elektronische Bauteile |
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FUSBLC6-2 Datenblatt(PDF) 2 Page - FutureWafer Tech Co.,Ltd |
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FUSBLC6-2 Datenblatt(HTML) 2 Page - FutureWafer Tech Co.,Ltd |
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2 / 9 page ![]() 2 FUSBLC6-2/FDA0561T Low Capacitance TVS Array Document Number:F11910A 26-May-2021 V 2.0 www.futurewafer.com.tw DC Characteristics Parameter Symbol Test Condition Value Units Min. Typ. Max. Breakdown Voltage V BR It = 1mA , Ta = 25°C 6.1 - 9.6 V Leakage Current I L V = 5.5V , Pin 5 to GND - - 0.15 uA Protection Characteristics Parameter Symbol Test Condition Value Units Min. Typ. Max. Clamping Voltage V CL,SURGE IPP = 1A,8/20us, - - 12 V IPP = 5A,8/20us, - - 15 Peak Pulse Current I PP Tp = 8/20us - - 5 A AC Characteristics Parameter Symbol Test Condition Value Units Min. Typ. Max. C L V = 0V,f = 1MHZ, I/O to I/O - 0.5 0.8 pF Line Capacitance V = 0V,f = 1MHZ, I/O to GND - 0.6 1.0 6. Electrical Characteristics PPPM Peak Pulse Power Dissipation-Max Power Dissipation VR Stand-off Voltage-Maximum Voltage That Can be Applied to The TVS Without Operation IR Reverse Leakage Current-Current Measured at VR VF Forward Voltage Drop for Uni-directional VBR Breakdown Voltage-Maximum Voltage that Flows Though the TVS at a Specified Test Current(IT) VC Clamping Voltage-Peak Voltage Measured Across the Suppressor at a Specified Ippm (Peak Impulse Current) 7. I-V Curve Characteristics |
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