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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFS830A Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRFS830A Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRFS830A FEATURES · Drain Current –ID= 3.1A@ TC=25℃ · Drain Source Voltage- : VDSS= 500V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Pluse 12 A PD Total Dissipation @TC=25℃ 38 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.31 ℃ /W |
Ähnliche Teilenummer - IRFS830A |
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Ähnliche Beschreibung - IRFS830A |
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