BSS138 datasheet(1/10 Pages) FUTUREWAFER

Teilenummer	BSS138

Bauteilbeschribung	N Channel Enhancement Mode MOSFET

PDF	10 Pages

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Hersteller	FUTUREWAFER [FutureWafer Tech Co.,Ltd]

Direct Link	http://futurewafer.com.tw/

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BSS138

N Channel Enhancement Mode MOSFET

Document No.: F51833F

11-NOV-2021 V 2.2

www.futurewafer.com.tw

FQE-001-04

1/10

1. Synopsis

1-1. General Description

These N-Channel Enhancement Mode Field Effect

Transistors Are Produced by DMOS Technology.

These Products Have Been Designed to Minimize

On-State Resistance While Provide Rugged, Reliable,

And Fast Switching Performance. These Products Are

Particularly Suited For Low Voltage, Low Current

Applications Such as Small Servo Motor Control, Power

MOSFET Gate Drivers, And Other Switching Applications.

1-2. Feature List

●

R DS(ON) = 3.5Ω @ V GS = 10V

R DS(ON) = 6.0Ω @ V GS = 4.5V

●

Low On-Resistance

●

Low Input Capacitance

●

Fast Switching Speed

●

Low Input / Output Leakage

●

Low Gate Threshold Voltage

1-3. Mechanical Characteristics

●

Molded JEDEC Package: SOT-23

●

Packing: Tape and Reel

●

Flammability rating UL 94V-0

●

Halogen Free

●

JEDEC MSL Classification: LEVEL 1

1-4. Device Characteristics

1-5. Thermal Characteristics

SOT-23

G

D

S

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