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ADRF5345BCCZN-R7 Datenblatt(PDF) 3 Page - Analog Devices

Teilenummer ADRF5345BCCZN-R7
Bauteilbeschribung  High Linearity, Silicon SP4T Switch, 1.8 GHz to 3.8 GHz
PDF  11 Pages
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Hersteller  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADRF5345BCCZN-R7 Datenblatt(HTML) 3 Page - Analog Devices

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Data Sheet
ADRF5345
SPECIFICATIONS
analog.com
Rev. 0 | 3 of 11
Supply voltage (VDD) = 5 V, control voltage (VCTL) = 0 V or 3.3 V, TA = 25°C, and it is a 50 Ω system, unless otherwise noted.
Table 1.
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
FREQUENCY RANGE
1.8
3.8
GHz
INSERTION LOSS
Between RFC and RF1 to RF4 (On)
2.3 GHz to 2.8 GHz
0.35
dB
3.3 GHz to 3.8 GHz
0.40
dB
ISOLATION
Between RFC and RF1 to RF4 (Off)
2.3 GHz to 2.8 GHz
32
dB
3.3 GHz to 3.8 GHz
29
dB
RETURN LOSS
RFC and RF1 to RF4 (On)
2.3 GHz to 2.8 GHz
24
dB
3.3 GHz to 3.8 GHz
24
dB
SWITCHING
Rise and Fall Time (tRISE, tFALL)
90% to 10% of RF output (RFOUT)
120
μs
On and Off Time (tON, tOFF)
50% VCTL to 10% to 90% of RFOUT
140
µs
0.1 dB Settling Time
50% VCTL to 0.1 dB of final RFOUT
340
µs
INPUT LINEARITY
0.1 dB Power Compression (P0.1dB)
LTE (10 dB peak average ratio (PAR))
50
dBm
Third-Order Intercept (IP3)
Two-tone input power = 30 dBm continuous wave per tone
84
dBm
SUPPLY CURRENT
2
mA
DIGITAL CONTROL INPUTS
Voltage
0
0.8
V
Low Voltage (VIL)
High Voltage (VIH)
1.2
3.45
V
Current
Low (IINL)
LS
35
μA
V1 and V2
<1
μA
High (IINH)
LS
<1
μA
V1 and V2
1.5
μA
RECOMMENDED OPERATING CONDITIONS
Supply Voltage (VDD)
4.75
5.25
V
Control Voltage (VCTL)
0
3.45
V
RF Input Power
TCASE = 105°C, life time
Continuous Wave
39
dBm
LTE Signal
10 dB PAR
Average
39
dBm
Peak
49
dBm
Continuous Wave
TCASE = 105°C, single event (<10 sec)
42
dBm
LTE Signal
10 dB PAR
Average
42
dBm
Peak
52
dBm
Case Temperature (TCASE)
–40
+105
°C



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