HMC8413 datasheet(6/21 Pages) AD

6 / 21 page

HMC8413

Data Sheet

Rev. 0 | Page 6 of 21

TYPICAL PERFORMANCE CHARACTERISTICS

IDQ is the collector current without RF signal applied, and IDD is the collector current with RF signal applied.

–20

–15

–5

–10

FREQUENCY (GHz)

S22

S21

S11

Figure 7. Broadband Gain and Return Loss vs. Frequency, 200 MHz to 14 GHz,

VDD = 5 V, IDQ = 95 mA (S22 Is the Output Return Loss, S21 Is the Gain, and S11

Is the Input Return Loss)

200

180

140 160

120

100

FREQUENCY (MHz)

+85°C

+25°C

–40°C

Figure 8. Gain vs. Frequency for Various Temperatures, 10 MHz to 200 MHz,

VDD = 5 V, IDQ = 95 mA

FREQUENCY (GHz)

6V, IDQ = 120mA

5V, IDQ = 95mA

4V, IDQ = 70mA

3V, IDQ = 47mA

2V, IDQ = 25mA

Figure 9. Gain vs. Frequency for Various Supply Voltages and IDQ, RBIAS = 787 Ω

–20

–15

–5

–10

200

180

140 160

120

100

FREQUENCY (MHz)

S22

S21

S11

Figure 10. Gain and Return Loss vs. Frequency, 10 MHz to 200 MHz, VDD = 5 V,

IDQ = 95 mA

FREQUENCY (GHz)

+85°C

+25°C

–40°C

Figure 11. Gain vs. Frequency for Various Temperatures, 200 MHz to 12 GHz,

VDD = 5 V, IDQ = 95 mA

FREQUENCY (GHz)

6.7kΩ, IDQ = 25mA

3.6kΩ, IDQ = 35mA

1.9kΩ, IDQ = 55mA

1.2kΩ, IDQ = 75mA

787Ω, IDQ = 95mA

540Ω, IDQ = 115mA

Figure 12. Gain vs. Frequency for Various Bias Resistor Values and IDQ, VDD = 5 V

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