ISCNH310P datasheet(2/3 Pages) ISC

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isc N-Channel MOSFET Transistor

ISCNH310P

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID= 0.25mA

700

VGS(th)

Gate Threshold Voltage

VDS= 10V; ID= 0.25mA

2.5

4.5

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 7.5A

0.26

IGSS

Gate-Body Leakage Current

VGS= ±30V;VDS= 0

0.1

IDSS

Zero Gate Voltage Drain Current

VDS= 700V; VGS= 0

1.0

VSD

Forward On-Voltage

IS= 7.5A; VGS= 0

1.7

Gate resistance

f = 1.0MHz open drain

12.5

Ciss

Input Capacitance

VGS = 0V,

VDS = 100V,

f = 1.0MHz

1122

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

2.5

Total Gate Charge

VDD = 520V,

ID = 15A,

VGS =10V

Qgs

Gate-Source Charge

5.5

Qgd

Gate-Drain Charge

10.5

td(on)

Turn-on Delay Time

VDD = 400V,

ID = 15A,

RG = 25Ω

Turn-on Rise Time

td(off)

Turn-off Delay Time

100

Turn-off Fall Time

VSDF

Diode forward voltage

ISD=12A, VGS = 0 V

1.4

trr

Reverse Recovery Time

VDD = 40V,IF = IS,

diF/dt =100A /μs

410

Qrr

Reverse Recovery Charge

4.1

Irrm

Peak Reverse Recovery Current

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