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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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ISCNH345P Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNH345P Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCNH345P · FEATURES · Drain Current –ID= 3.0A@ TC=25℃ · Drain Source Voltage- : VDSS= 1500V(Min) · Static Drain-Source On-Resistance : RDS(on) = 9Ω(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · High speed power switching · Switching regulator, DC-DC converter · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1500 V VGS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 3.0 A IDM Drain Current-Single Pulsed 12 A PD Total Dissipation @TC=25℃ 140 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.89 ℃ /W |
Ähnliche Teilenummer - ISCNH345P |
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Ähnliche Beschreibung - ISCNH345P |
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